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SIEMENS BSM25GD120D2

  • BSM25GD120D2

BSM25GD120D2 Insulated Gate Bipolar Transistor, 25A I(C), 1200V V(BR)CES, N-Channel,; BSM25GD120D2

· Categories: IGBT
· Manufacturer: SIEMENS
· Price:
Price Range: US$ 50 - US$ 200 (Estimated)
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· Date Code: Please Verify on Quote
. Available Qty: 143
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Content last revised on July 9, 2023

Manufacturer Part Number: BSM25GD120D2Part Life Cycle Code: ObsoleteIhs Manufacturer: EUPEC GMBH & CO KGManufacturer: Eupec Gmbh & Co KgRisk Rank: 5.6Collector Current-Max (IC): 25 ACollector-Emitter Voltage-Max: 1200 VConfiguration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODEGate-Emitter Voltage-Max: 20 VJESD-30 Code: R-XUFM-X17Number of Elements: 6Number of Terminals: 17Operating Temperature-Max: 150 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 200 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTransistor Element Material: SILICONVCEsat-Max: 3.2 V Insulated Gate Bipolar Transistor, 25A I(C), 1200V V(BR)CES, N-Channel,