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EUPEC BSM30GD60DLCE3224

  • BSM30GD60DLCE3224

BSM30GD60DLCE3224 Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, MODULE-17; BSM30GD60DLCE3224

· Categories: IGBT
· Manufacturer: EUPEC
· Price:
Price Range: US$ 50 - US$ 200 (Estimated)
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. Available Qty: 206
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Content last revised on May 19, 2023

Manufacturer Part Number: BSM30GD60DLCE3224Rohs Code: YesPart Life Cycle Code: ObsoleteIhs Manufacturer: Infineon TECHNOLOGIES AGPart Package Code: MODULEPackage Description: MODULE-17Pin Count: 17ECCN Code: EAR99Manufacturer: Infineon Technologies AGRisk Rank: 5.58Case Connection: ISOLATEDCollector Current-Max (IC): 40 ACollector-Emitter Voltage-Max: 600 VConfiguration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODEGate-Emitter Voltage-Max: 20 VJESD-30 Code: R-XUFM-X17Number of Elements: 6Number of Terminals: 17Operating Temperature-Max: 150 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 135 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTime Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, MODULE-17

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