#EUPEC, #BSM400GA120DL, #IGBT_Module, #IGBT, BSM400GA120DL Insulated Gate Bipolar Transistor, 680A I(C), 1200V V(BR)CES, N-Channel, POWER MODULE-5; BSM400GA120DL
Manufacturer Part Number: BSM400GA120DLPart Life Cycle Code: ObsoleteIhs Manufacturer: Infineon TECHNOLOGIES AGPackage Description: POWER MODULE-5Manufacturer: Infineon Technologies AGRisk Rank: 5.06Additional Feature: FASTCase Connection: ISOLATEDCollector Current-Max (IC): 680 ACollector-Emitter Voltage-Max: 1200 VConfiguration: SINGLE WITH BUILT-IN DIODEGate-Emitter Voltage-Max: 20 VJESD-30 Code: R-XUFM-X5Number of Elements: 1Number of Terminals: 5Operating Temperature-Max: 150 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 2700 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTransistor Application: GENERAL PURPOSE SWITCHINGTransistor Element Material: SILICONTurn-off Time-Nom (toff): 1000 nsTurn-on Time-Nom (ton): 470 nsVCEsat-Max: 2.6 V Insulated Gate Bipolar Transistor, 680A I(C), 1200V V(BR)CES, N-Channel, POWER MODULE-5