#EUPEC, #BSM50GD60DLCE3226, #IGBT_Module, #IGBT, BSM50GD60DLCE3226 Insulated Gate Bipolar Transistor, 70A I(C), 600V V(BR)CES, N-Channel, MODULE-17; BSM50GD60DLCE3226
Manufacturer Part Number: BSM50GD60DLCE3226Part Life Cycle Code: ObsoleteIhs Manufacturer: EUPEC GMBH & CO KGPackage Description: MODULE-17Manufacturer: Eupec Gmbh & Co KgRisk Rank: 5.64Case Connection: ISOLATEDCollector Current-Max (IC): 70 ACollector-Emitter Voltage-Max: 600 VConfiguration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODEGate-Emitter Voltage-Max: 20 VJESD-30 Code: R-XUFM-X17Number of Elements: 6Number of Terminals: 17Operating Temperature-Max: 125 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 250 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTransistor Element Material: SILICONTurn-off Time-Nom (toff): 151 nsTurn-on Time-Nom (ton): 52 nsVCEsat-Max: 2.45 V Insulated Gate Bipolar Transistor, 70A I(C), 600V V(BR)CES, N-Channel, MODULE-17