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Infineon Technologies BSO203P

  • BSO203P

BSO203P Power Field-Effect Transistor, 8.2A I(D), 20V, 0.021ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, SOP-8; BSO203P

· Categories: IGBT
· Manufacturer: Infineon Technologies
· Price:
Price Range: US$ 50 - US$ 200 (Estimated)
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. Available Qty: 2087
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Content last revised on May 26, 2023

Manufacturer Part Number: BSO203PRohs Code: NoPart Life Cycle Code: ObsoleteIhs Manufacturer: Infineon TECHNOLOGIES AGPart Package Code: SOTPackage Description: SMALL OUTLINE, R-PDSO-G8Pin Count: 8ECCN Code: EAR99HTS Code: 8541.29.00.95Manufacturer: Infineon Technologies AGRisk Rank: 5.63Additional Feature: LOGIC LEVEL COMPATIBLE, AVALANCHE RATEDAvalanche Energy Rating (Eas): 97 mJConfiguration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 20 VDrain Current-Max (Abs) (ID): 8.2 ADrain Current-Max (ID): 8.2 ADrain-source On Resistance-Max: 0.021 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJESD-30 Code: R-PDSO-G8JESD-609 Code: e0Moisture Sensitivity Level: 1Number of Elements: 2Number of Terminals: 8Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: P-CHANNELPower Dissipation-Max (Abs): 2 WPulsed Drain Current-Max (IDM): 32.8 AQualification Status: Not QualifiedSubcategory: Other TransistorsSurface Mount: YESTerminal Finish: TIN LEADTerminal Form: GULL WINGTerminal Position: DUALTime Power Field-Effect Transistor, 8.2A I(D), 20V, 0.021ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, SOP-8