Content last revised on October 31, 2024
BUV20 Product details DESCRIPTION
The BUV20 is silicon Multiepitaxial Planar NPN transistor mounted in jedec TO-3 metal case. It is intended for use in switching and linear applications in military and industrial equipment.
■ STMicroelectronics PREFERRED SALESTYPE
■ NPN TRANSISTOR
■ HIGH CURRENT CAPABILITY
■ FAST SWITCHING SPEED
■ HIGH RUGGEDNESS
APPLICATIONS
■ LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT
■ SWITCHING REGULATORS
• High DC current gain:
hFE min = 20 at IC = 25 A
= 10 at IC = 50 A
• Low VCE(sat):
VCE(sat) max. = 0.6 V at IC = 25 A
= 0.9 V at IC = 50 A
• Very fast switching times: TF = 0.25 µs at IC = 50 A
ABSOLUTE MAXIMUM RATINGS
VCEO Collector-Emitter Voltage (IB = 0)125V
VEBO Emitter-Base Voltage (IC = 0) 7V
IC Collector Current 50A
ICM Collector Peak Current 60A
Ptot Total Power Dissipation at Tcase ≤ 25°C 250W
Tstg Storage Temperature -65 to 200°C
Tj Junction Temperature 200°C