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Cree Inc CGH40006S

  • CGH40006S

CGH40006S RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Nitride, N-Channel, High Electron Mobility FET, QFN-6; CGH40006S

· Categories: IGBT
· Manufacturer: Cree Inc
· Price:
Price Range: US$ 50 - US$ 200 (Estimated)
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· Date Code: Please Verify on Quote
. Available Qty: 1032
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Content last revised on May 18, 2023

Manufacturer Part Number: CGH40006SPart Life Cycle Code: ActiveIhs Manufacturer: CREE INCPart Package Code: QFNPackage Description: SMALL OUTLINE, S-PDSO-N6Pin Count: 6ECCN Code: EAR99Manufacturer: Cree, Inc.Risk Rank: 2.04Configuration: SINGLEDS Breakdown Voltage-Min: 120 VFET Technology: HIGH ELECTRON MOBILITYHighest Frequency Band: C BANDJESD-30 Code: S-PDSO-N6Number of Elements: 1Number of Terminals: 6Operating Mode: ENHANCEMENT MODEPackage Body Material: PLASTIC/EPOXYPackage Shape: SQUAREPackage Style: SMALL OUTLINEPolarity/Channel Type: N-CHANNELQualification Status: Not QualifiedSurface Mount: YESTerminal Form: NO LEADTerminal Position: DUALTransistor Application: AMPLIFIERTransistor Element Material: GALLIUM NITRIDE RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Nitride, N-Channel, High Electron Mobility FET, QFN-6