Content last revised on November 27, 2025
CM1200HA-24J: A High-Current IGBT Module Engineered for Robust Power Conversion
The CM1200HA-24J is a high-power single IGBT module designed for demanding switching applications, delivering robust performance through its impressive electrical and thermal characteristics. With core specifications of 1200V and 1200A, this module provides the foundational strength for high-output power systems. Its key engineering benefits include exceptionally low thermal resistance for enhanced reliability and a low saturation voltage that directly improves system efficiency. This module is engineered to address the core challenge of managing high currents while ensuring thermal stability and minimizing power loss in large-scale inverters and motor drives. For systems requiring robust performance under heavy loads, this 1200A module provides an optimal balance of power handling and thermal efficiency.
Key Parameter Overview
A Data-Centric Look at High-Current Performance
The specifications of the CM1200HA-24J are tailored for high-reliability power conversion. The module's design focuses on delivering high current capacity while maintaining favorable thermal and electrical characteristics to ensure operational stability and efficiency. A standout feature is its extremely low junction-to-case thermal resistance, which is critical for effective thermal management in high-power density applications.
| Absolute Maximum Ratings (Tj = 25°C) | |
|---|---|
| Collector-Emitter Voltage (VCES) | 1200V |
| Collector Current (IC) at TC = 25°C | 1200A |
| Peak Collector Current (ICM) | 2400A |
| Maximum Collector Dissipation (PC) | 5800W |
| Operating Junction Temperature (Tj) | -40 to +150°C |
| Electrical & Thermal Characteristics (Tj = 25°C unless otherwise noted) | |
| Collector-Emitter Saturation Voltage (VCE(sat)) at IC=1200A, VGE=15V, Tj=125°C | 2.5V (Typ.) |
| Thermal Resistance, Junction to Case (Rth(j-c)Q) per IGBT | 0.022°C/W (Max.) |
| Thermal Resistance, Junction to Case (Rth(j-c)R) per FWDi | 0.050°C/W (Max.) |
| Isolation Voltage (Viso) AC 1 Min. | 2500V |
Download the CM1200HA-24J datasheet for detailed specifications and performance curves.
Application Scenarios & Value
System-Level Advantages in Megawatt-Scale Power Conversion
The CM1200HA-24J is engineered for applications where high current handling and thermal reliability are paramount. Its robust 1200A continuous collector current rating makes it a primary choice for the core of high-power industrial systems.
A high-fidelity engineering scenario for this module is in the design of a Variable Frequency Drive (VFD) for a multi-megawatt motor used in mining or material processing. In such applications, the drive must handle immense inrush currents during motor startup and sustain heavy loads without thermal runaway. The CM1200HA-24J's high current capability directly meets this need, while its exceptionally low thermal resistance of 0.022°C/W is a decisive factor. This superior thermal performance allows engineers to design more compact and cost-effective cooling systems, as heat is evacuated from the IGBT chip more efficiently. This translates to higher system reliability and a reduced total cost of ownership. The integrated super-fast recovery free-wheel diode further simplifies the inverter design, ensuring protection and efficient operation during inductive load switching.
For systems with different current requirements, related components can provide tailored solutions. For example, the CM600DX-24T offers a lower current rating for mid-range motor drives within a similar voltage class.
Frequently Asked Questions
Engineering-Focused Queries on the CM1200HA-24J
How does the Rth(j-c) of 0.022°C/W directly impact heatsink selection and system power density?
The junction-to-case thermal resistance (Rth(j-c)) is a measure of how effectively heat can be transferred from the active semiconductor junction to the module's case. A lower value is better. The CM1200HA-24J's extremely low Rth(j-c) of 0.022°C/W signifies highly efficient heat evacuation. For a design engineer, this means that for a given amount of power dissipated as heat, the IGBT junction temperature will be significantly lower. This provides two key advantages: first, it allows for the use of a smaller, lighter, and potentially less expensive heatsink to maintain a safe operating temperature, which increases the overall power density of the system. Second, it provides a greater thermal margin, enhancing the module's reliability and extending its operational life, especially under demanding load cycles.
What is the primary benefit of the module's low VCE(sat) under high temperature conditions?
What is the significance of a low VCE(sat) at high temperatures? It directly translates to lower conduction power loss and higher system efficiency. The Collector-Emitter Saturation Voltage (VCE(sat)) is the voltage drop across the IGBT when it is fully on. Since power loss during conduction is calculated as VCE(sat) multiplied by the collector current, a lower VCE(sat) results in less energy being wasted as heat. The CM1200HA-24J maintains a low typical VCE(sat) of 2.5V at a full 1200A load and a high junction temperature of 125°C. This is critical because IGBTs in high-power applications operate at elevated temperatures, and this characteristic ensures the module remains efficient and thermally stable when it matters most.
Engineered for high-stress environments, the CM1200HA-24J provides a dependable foundation for building powerful and efficient power electronics. For technical inquiries or to discuss how this module can be integrated into your next project, please contact our engineering support team.