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MITSUBISHI CM1200HA-66H IGBT Module

CM1200HA-66H

CM1200HA-66H Insulated Gate Bipolar Transistor, 1200A I(C), 3300V V(BR)CES, N-Channel

· Categories: IGBT Module
· Manufacturer: MITSUBISHI
· Price: US$
· Date Code: 2022+
. Available Qty: 474
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CM1200HA-66H Specification

Maximum ratings and characteristics
.Absolute maximum ratings (Tc=25°C unless without specified)
Collector-Emitter voltage Vces:3300V
Gate-Emitter voltage VGES:±20V
Collector current Ic:1200A
Collector current Icp:2400A
Collector power dissipation Pc:10420W
Collector-Emitter voltage VCES:6000V
Operating junction temperature Tj:-40~+150°C
Storage temperature Tstg :-40 to +125°C
Mounting  torque Main terminals screw M86.67~8.24 N.m
Mounting  torque Mounting screw M6 2.84~3.43 N.m
Mounting  torque Auxiliary terminals screw M4 0.88~1.08 N.m
Weight Typical value 22KG

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