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MITSUBISHI CM150DY-28H IGBT Module

CM150DY-28H

CM150DY-28H Mitsubishi Insulated Gate Bipolar Transistor, 150A, 1400V

· Categories: IGBT Module
· Manufacturer: MITSUBISHI
· Price: US$
· Date Code: 2024+
. Available Qty: 333
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CM150DY-28H Specification

CM150DY-28H Product details
Features:
□ Low Drive Power
□ Low VCE(sat)
□ Discrete Super-Fast Recovery (135ns) Free Wheel Diode
□ High Frequency Operation (20-25kHz)
□ Isolated Baseplate for Easy Heat Sinking

Applications:
□ AC Motor Control
□ Motion/Servo Control
□ UPS
□ Welding Power Supplies
□ Laser Power Supplies

Absolute Maximum Ratings, Tj = 25°C unless otherwise specified
Junction Temperature Tj -40 to 150 °C
Storage Temperature Tstg -40 to 125 °C
Collector-Emitter Voltage (G-E SHORT) VCES 1400 Volts
Gate-Emitter Voltage (C-E SHORT) VGES ±20 Volts
Collector Current (Tc = 25°C) IC 150 Amperes
Peak Collector Current (Tj ≤ 150°C) ICM 300* Amperes
Maximum Collector Dissipation (Tc = 25°C) Pc 1100 Watts
Max. Mounting Torque M5~M6 Terminal Screws 17~26 in-lb
Weight 270 Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) Viso 2500 Volts

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