Mitsubishi CM200DY-12H IGBT Module

CM200DY-12H Description:

Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of two IGBTs in a half-bridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All compo-nents and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management.

Features:

Low Drive Power

Low VCE(sat)

Discrete Super-Fast Recovery

Free-Wheel Diode

High Frequency Operation

Isolated Baseplate for Easy

Heat Sinking

Applications:

AC Motor Control

Motion/Servo Control

UPS

Welding Power Supplies

Absolute Maximum Ratings, Tj = 25°C unless otherwise specified

Junction Temperature Tj -40 to 150 °C

Storage Temperature Tstg -40 to 125 °C

Collector-Emitter Voltage (G-E SHORT) VCES 600 Volts

Gate-Emitter Voltage (C-E SHORT) VGES ±20 Volts

Collector Current (Tc = 25°C) IC 200 Amperes

Peak Collector Current (Tj ≤ 150°C) ICM 400* Amperes

Mounting Torque,M5 Main Terminal 1.47~1.96 N·m

Mounting Torque,M6 Mounting 1.96~2.94 N·m

Maximum Collector Dissipation (Tc = 25°C) Pc 780 Watts

Weight 270 Grams

Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) Viso 2500 Volts