Content last revised on December 22, 2023
Description:
Mitsubishi IGBT Modules are de-signed for use in switching applica-tions. Each module consists of oneIGBT having a reverse-connectedsuper-fast recovery free-wheel di-ode and an anode-collector con-nected super-fast recovery free-wheel diode. All components andinterconnects are isolated from theheat sinking baseplate, offeringsimplified system assembly andthermal management.
Maximum ratings and characteristics
.Absolute maximum ratings (Tc=25°C unless without specified)
Collector-Emitter voltage Vces:1200V
Gate-Emitter voltage VGES:±20V
Collector current Ic:50A
Collector current Icp:100A
Collector power dissipation Pc:400W
Collector-Emitter voltage VCES:2500V
Operating junction temperature Tj:+150°C
Storage temperature Tstg :-40 to +125°C
Mounting M5 screw torque 2.5~3.5 N·m
Weight Typical value 310g