Content last revised on July 25, 2023
Manufacturer Part Number: CSD16556Q5BBrand Name: Texas InstrumentsPbfree Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: Texas INSTRUMENTS INCPackage Description: SMALL OUTLINE, R-PDSO-N5ECCN Code: EAR99HTS Code: 8541.29.00.95Manufacturer: Texas InstrumentsRisk Rank: 1.09Additional Feature: AVALANCHE RATEDAvalanche Energy Rating (Eas): 530 mJCase Connection: DRAINConfiguration: SINGLE WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 25 VDrain Current-Max (Abs) (ID): 100 ADrain Current-Max (ID): 40 ADrain-source On Resistance-Max: 0.0015 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJESD-30 Code: R-PDSO-N5JESD-609 Code: e3Moisture Sensitivity Level: 1Number of Elements: 1Number of Terminals: 5Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): 260Polarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 3.2 WPulsed Drain Current-Max (IDM): 249 ASubcategory: FET General Purpose PowersSurface Mount: YESTerminal Finish: Matte Tin (Sn)Terminal Form: NO LEADTerminal Position: DUALTime 25V NexFET N Channel Power MosFET 8-VSON-CLIP -55 to 150