#EUPEC, #DDB6U84N16RR, #IGBT_Module, #IGBT, DDB6U84N16RR Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, MODULE-17; DDB6U84N16RR
Manufacturer Part Number: DDB6U84N16RRPbfree Code: YesPart Life Cycle Code: Not RecommendedIhs Manufacturer: Infineon TECHNOLOGIES AGPart Package Code: MODULEPackage Description: FLANGE MOUNT, R-XUFM-X17Pin Count: 17ECCN Code: EAR99Manufacturer: Infineon Technologies AGRisk Rank: 5.12Case Connection: ISOLATEDCollector Current-Max (IC): 50 ACollector-Emitter Voltage-Max: 1200 VConfiguration: SINGLE WITH BUILT-IN DIODE AND THREE PHASE DIODE BRIDGEJESD-30 Code: R-XUFM-X17Number of Elements: 1Number of Terminals: 17Operating Temperature-Max: 150 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELQualification Status: Not QualifiedSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTime Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, MODULE-17