DYNEX DIM1200NSM12-E

  • DIM1200NSM12-E

DIM1200NSM12-E Insulated Gate Bipolar Transistor, 1200A I(C), 1200V V(BR)CES, N-Channel, PLASTIC, N, 7 PIN; DIM1200NSM12-E

· Categories: IGBT
· Manufacturer: DYNEX
· Price:
Price Range: US$ 50 - US$ 200 (Estimated)
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. Available Qty: 176
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Content last revised on May 3, 2023

Manufacturer Part Number: DIM1200NSM12-E000Pbfree Code: YesPart Life Cycle Code: Contact ManufacturerIhs Manufacturer: DYNEX SEMICONDUCTOR LTDPackage Description: FLANGE MOUNT, R-PUFM-X7Pin Count: 7Manufacturer: Dynex SemiconductorRisk Rank: 5.73Additional Feature: HIGH RELIABILITYCase Connection: ISOLATEDCollector Current-Max (IC): 1200 ACollector-Emitter Voltage-Max: 1200 VConfiguration: COMPLEXJESD-30 Code: R-PUFM-X7Number of Elements: 2Number of Terminals: 7Package Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELQualification Status: Not QualifiedSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTime Insulated Gate Bipolar Transistor, 1200A I(C), 1200V V(BR)CES, N-Channel, PLASTIC, N, 7 PIN