#DYNEX, #DIM2400NSM12_E, #IGBT_Module, #IGBT, DIM2400NSM12-E Insulated Gate Bipolar Transistor, 2400A I(C), 1200V V(BR)CES, N-Channel, PLASTIC, N, 7 PIN; DIM2400NSM12
Manufacturer Part Number: DIM2400NSM12-E000Pbfree Code: YesPart Life Cycle Code: Contact ManufacturerIhs Manufacturer: DYNEX SEMICONDUCTOR LTDPackage Description: FLANGE MOUNT, R-PUFM-X7Pin Count: 7Manufacturer: Dynex SemiconductorRisk Rank: 5.73Additional Feature: HIGH RELIABILITYCase Connection: ISOLATEDCollector Current-Max (IC): 2400 ACollector-Emitter Voltage-Max: 1200 VConfiguration: COMPLEXJESD-30 Code: R-PUFM-X7Number of Elements: 2Number of Terminals: 7Package Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELQualification Status: Not QualifiedSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTime Insulated Gate Bipolar Transistor, 2400A I(C), 1200V V(BR)CES, N-Channel, PLASTIC, N, 7 PIN