#Diodes Inc, #DMB53D0UDW_7, #IGBT_Module, #IGBT, DMB53D0UDW-7 Small Signal Field-Effect Transistor, 0.16A I(D), 50V, 1-Element, N-Channel, Silicon, Metal-oxide Semicondu
Manufacturer Part Number: DMB53D0UDW-7Pbfree Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: DIODES INCPackage Description: SMALL OUTLINE, R-PDSO-G6Pin Count: 6ECCN Code: EAR99Manufacturer: Diodes IncorporatedRisk Rank: 1.67Additional Feature: HIGH RELIABILITYCollector Current-Max (IC): 0.1 AConfiguration: SINGLE WITH BUILT IN BIPOLAR TRANSISTOR AND DIODEDC Current Gain-Min (hFE): 200DS Breakdown Voltage-Min: 50 VDrain Current-Max (ID): 0.16 ADrain-source On Resistance-Max: 4 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJESD-30 Code: R-PDSO-G6JESD-609 Code: e3Moisture Sensitivity Level: 1Number of Elements: 1Number of Terminals: 6Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): 260Polarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 0.25 WQualification Status: Not QualifiedSubcategory: Other TransistorsSurface Mount: YESTerminal Finish: Matte Tin (Sn)Terminal Form: GULL WINGTerminal Position: DUALTime Small Signal Field-Effect Transistor, 0.16A I(D), 50V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, ULTRA SMALL, PLASTIC PACKAGE-6