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Diodes Inc DMG4406LSS-13

  • DMG4406LSS-13
  • DMG4406LSS-13 Power Field-Effect Transistor, 9.3A I(D), 30V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, SOP-8; DMG4406LSS-13

    · Categories: IGBT
    · Manufacturer: Diodes Inc
    · Price:
    Price Range: US$ 50 - US$ 200 (Estimated)
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    · Date Code: Please Verify on Quote
    . Available Qty: 25187
    MOQ: 1 PC
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    Content last revised on May 1, 2023

    Manufacturer Part Number: DMG4406LSS-13Pbfree Code: YesPart Life Cycle Code: ObsoleteIhs Manufacturer: DIODES INCPart Package Code: SOTPackage Description: SMALL OUTLINE, R-PDSO-G8Pin Count: 8ECCN Code: EAR99Manufacturer: Diodes IncorporatedRisk Rank: 5.8Additional Feature: HIGH RELIABILITYConfiguration: SINGLE WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 30 VDrain Current-Max (Abs) (ID): 10.3 ADrain Current-Max (ID): 9.3 ADrain-source On Resistance-Max: 0.011 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJESD-30 Code: R-PDSO-G8JESD-609 Code: e3Moisture Sensitivity Level: 1Number of Elements: 1Number of Terminals: 8Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): 260Polarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 2 WPulsed Drain Current-Max (IDM): 90 ASubcategory: FET General Purpose PowersSurface Mount: YESTerminal Finish: Matte Tin (Sn)Terminal Form: GULL WINGTerminal Position: DUALTime Power Field-Effect Transistor, 9.3A I(D), 30V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, SOP-8