#Diodes Inc, #DMG4407SSS_13, #IGBT_Module, #IGBT, DMG4407SSS-13 Power Field-Effect Transistor, 8.2A I(D), 30V, 0.011ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semico
Manufacturer Part Number: DMG4407SSS-13Pbfree Code: YesPart Life Cycle Code: End Of LifeIhs Manufacturer: DIODES INCPart Package Code: SOTPackage Description: SMALL OUTLINE, R-PDSO-G8Pin Count: 8ECCN Code: EAR99Manufacturer: Diodes IncorporatedRisk Rank: 5.3Additional Feature: HIGH RELIABILITYConfiguration: SINGLE WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 30 VDrain Current-Max (Abs) (ID): 9.9 ADrain Current-Max (ID): 8.2 ADrain-source On Resistance-Max: 0.011 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJESD-30 Code: R-PDSO-G8JESD-609 Code: e3Moisture Sensitivity Level: 1Number of Elements: 1Number of Terminals: 8Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 155 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): 260Polarity/Channel Type: P-CHANNELPower Dissipation-Max (Abs): 1.82 WPulsed Drain Current-Max (IDM): 80 ASubcategory: Other TransistorsSurface Mount: YESTerminal Finish: Matte Tin (Sn)Terminal Form: GULL WINGTerminal Position: DUALTime Power Field-Effect Transistor, 8.2A I(D), 30V, 0.011ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8