#Diodes Inc, #DMG5802LFX_7, #IGBT_Module, #IGBT, DMG5802LFX-7 Small Signal Field-Effect Transistor, 5.6A I(D), 24V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconduc
Manufacturer Part Number: DMG5802LFX-7Pbfree Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: DIODES INCPart Package Code: DFNPackage Description: SMALL OUTLINE, R-PDSO-F6Pin Count: 6ECCN Code: EAR99Manufacturer: Diodes IncorporatedRisk Rank: 5.71Additional Feature: HIGH RELIABILITYCase Connection: DRAINConfiguration: COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 24 VDrain Current-Max (Abs) (ID): 6.5 ADrain Current-Max (ID): 5.6 ADrain-source On Resistance-Max: 0.015 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJESD-30 Code: R-PDSO-F6JESD-609 Code: e4Moisture Sensitivity Level: 1Number of Elements: 2Number of Terminals: 6Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): 260Polarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 0.98 WQualification Status: Not QualifiedSubcategory: FET General Purpose PowerSurface Mount: YESTerminal Finish: Nickel/Palladium/Gold (Ni/Pd/Au)Terminal Form: FLATTerminal Position: DUALTime Small Signal Field-Effect Transistor, 5.6A I(D), 24V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, DFN5020-6, 6 PIN