#Diodes Inc, #DMN2004WK_7, #IGBT_Module, #IGBT, DMN2004WK-7 Small Signal Field-Effect Transistor, 0.54A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconduc
Manufacturer Part Number: DMN2004WK-7Pbfree Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: DIODES INCPackage Description: SMALL OUTLINE, R-PDSO-G3Pin Count: 3ECCN Code: EAR99Manufacturer: Diodes IncorporatedRisk Rank: 1.56Additional Feature: HIGH RELIABILITYConfiguration: SINGLE WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 20 VDrain Current-Max (Abs) (ID): 0.54 ADrain Current-Max (ID): 0.54 ADrain-source On Resistance-Max: 0.55 ΩFET Technology: METAL-OXIDE SEMICONDUCTORFeedback Cap-Max (Crss): 20 pFJESD-30 Code: R-PDSO-G3JESD-609 Code: e3Moisture Sensitivity Level: 1Number of Elements: 1Number of Terminals: 3Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): 260Polarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 0.2 WQualification Status: Not QualifiedReference Standard: AEC-Q101Subcategory: FET General Purpose PowersSurface Mount: YESTerminal Finish: Matte Tin (Sn)Terminal Form: GULL WINGTerminal Position: DUALTime Small Signal Field-Effect Transistor, 0.54A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3