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Diodes Inc DMN2019UTS-13

  • DMN2019UTS-13

DMN2019UTS-13 Small Signal Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET; DMN2019UTS-13

· Categories: IGBT
· Manufacturer: Diodes Inc
· Price:
Price Range: US$ 50 - US$ 200 (Estimated)
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· Date Code: Please Verify on Quote
. Available Qty: 1136
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Content last revised on June 17, 2023

Manufacturer Part Number: DMN2019UTS-13Rohs Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: DIODES INCECCN Code: EAR99Manufacturer: Diodes IncorporatedRisk Rank: 1.7Drain Current-Max (Abs) (ID): 5.4 AFET Technology: METAL-OXIDE SEMICONDUCTORJESD-609 Code: e3Moisture Sensitivity Level: 1Operating Temperature-Max: 150 °CPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 0.78 WSubcategory: FET General Purpose PowersSurface Mount: YESTerminal Finish: Matte Tin (Sn) Small Signal Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET