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Diodes Inc DMN3018SSS-13

  • DMN3018SSS-13

DMN3018SSS-13 Small Signal Field-Effect Transistor, 5.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8; DMN3018SSS-13

· Categories: IGBT
· Manufacturer: Diodes Inc
· Price:
Price Range: US$ 50 - US$ 200 (Estimated)
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· Date Code: Please Verify on Quote
. Available Qty: 2541
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Content last revised on September 4, 2023

Manufacturer Part Number: DMN3018SSS-13Pbfree Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: DIODES INCPackage Description: SMALL OUTLINE, R-PDSO-G8ECCN Code: EAR99Manufacturer: Diodes IncorporatedRisk Rank: 1.6Additional Feature: HIGH RELIABILITYConfiguration: SINGLE WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 30 VDrain Current-Max (Abs) (ID): 7.3 ADrain Current-Max (ID): 5.5 ADrain-source On Resistance-Max: 0.021 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJESD-30 Code: R-PDSO-G8JESD-609 Code: e3Moisture Sensitivity Level: 1Number of Elements: 1Number of Terminals: 8Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): 260Polarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 1.7 WReference Standard: AEC-Q101Subcategory: FET General Purpose PowersSurface Mount: YESTerminal Finish: Matte Tin (Sn)Terminal Form: GULL WINGTerminal Position: DUALTime Small Signal Field-Effect Transistor, 5.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8