#Diodes Inc, #DMN63D8LDW_7, #IGBT_Module, #IGBT, DMN63D8LDW-7 Small Signal Field-Effect Transistor, 0.22A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semicondu
Manufacturer Part Number: DMN63D8LDW-7Pbfree Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: DIODES INCPackage Description: SMALL OUTLINE, R-PDSO-G6ECCN Code: EAR99Manufacturer: Diodes IncorporatedRisk Rank: 1.59Additional Feature: HIGH RELIABILITYConfiguration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 30 VDrain Current-Max (ID): 0.22 ADrain-source On Resistance-Max: 4.5 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJESD-30 Code: R-PDSO-G6JESD-609 Code: e3Moisture Sensitivity Level: 1Number of Elements: 2Number of Terminals: 6Operating Mode: ENHANCEMENT MODEPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): 260Polarity/Channel Type: N-CHANNELReference Standard: AEC-Q101Surface Mount: YESTerminal Finish: Matte Tin (Sn)Terminal Form: GULL WINGTerminal Position: DUALTime Small Signal Field-Effect Transistor, 0.22A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-6