#EUPEC, #F4_150R12KS4, #IGBT_Module, #IGBT, F4-150R12KS4 Insulated Gate Bipolar Transistor, 180A I(C), 1200V V(BR)CES, N-Channel, MODULE-26; F4-150R12KS4
Manufacturer Part Number: F4-150R12KS4Pbfree Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: Infineon TECHNOLOGIES AGPart Package Code: MODULEPackage Description: FLANGE MOUNT, R-XUFM-X26Pin Count: 26ECCN Code: EAR99Manufacturer: Infineon Technologies AGRisk Rank: 5.19Case Connection: ISOLATEDCollector Current-Max (IC): 180 ACollector-Emitter Voltage-Max: 1200 VConfiguration: BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE AND THERMISTORGate-Emitter Voltage-Max: 20 VJESD-30 Code: R-XUFM-X26Number of Elements: 4Number of Terminals: 26Operating Temperature-Max: 150 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 960 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTime Insulated Gate Bipolar Transistor, 180A I(C), 1200V V(BR)CES, N-Channel, MODULE-26