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Infineon F4-150R12KS4 IGBT Module

F4-150R12KS4

F4-150R12KS4 Insulated Gate Bipolar Transistor, 180A I(C), 1200V V(BR)CES,

· Categories: IGBT Module
· Manufacturer: Infineon
· Price: US$
· Date Code: 2024+
. Available Qty: 185
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F4-150R12KS4 Specification

Maximum ratings and characteristics
.Absolute maximum ratings (Tc=25°C unless without specified)
Collector-Emitter voltage Vces:1200V
Gate-Emitter voltage VGES:±20V
Collector current Ic Continuous Tc=60°C :150A
Collector current Icp 1ms Tc=60°C :300A
Collector current Ic Continuous Tc=25°C :180A
Collector power dissipation Pc:960W
Isolation Voltage VIsol (AC 1 minute) :2500V
Operating junction temperature Tj:+150°C
Storage temperature Tstg :-40 to +125°C
Mounting screw torque 3.0~6.0 N·m
Weight Typical value 300g

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