#EUPEC, #F4_25R12NS4, #IGBT_Module, #IGBT, F4-25R12NS4 Insulated Gate Bipolar Transistor, 45A I(C), 1200V V(BR)CES, N-Channel, ECONOPACK-22; F4-25R12NS4
Manufacturer Part Number: F4-25R12NS4Rohs Code: YesPart Life Cycle Code: ObsoleteIhs Manufacturer: Infineon TECHNOLOGIES AGPackage Description: ECONOPACK-22Pin Count: 22Manufacturer: Infineon Technologies AGRisk Rank: 5.71Case Connection: ISOLATEDCollector Current-Max (IC): 45 ACollector-Emitter Voltage-Max: 1200 VConfiguration: BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE AND THERMISTORGate-Emitter Voltage-Max: 20 VJESD-30 Code: R-XUFM-X22Number of Elements: 4Number of Terminals: 22Operating Temperature-Max: 150 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 210 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTime Insulated Gate Bipolar Transistor, 45A I(C), 1200V V(BR)CES, N-Channel, ECONOPACK-22