#EUPEC, #F4_400R12KS4, #IGBT_Module, #IGBT, F4-400R12KS4 Insulated Gate Bipolar Transistor, 570A I(C), 1200V V(BR)CES, N-Channel, MODULE-18; F4-400R12KS4
Manufacturer Part Number: F4-400R12KS4B2Part Life Cycle Code: ObsoleteIhs Manufacturer: Infineon TECHNOLOGIES AGPart Package Code: MODULEPackage Description: MODULE-18Pin Count: 18ECCN Code: EAR99Manufacturer: Infineon Technologies AGRisk Rank: 5.82Case Connection: ISOLATEDCollector Current-Max (IC): 570 ACollector-Emitter Voltage-Max: 1200 VConfiguration: BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODEGate-Emitter Voltage-Max: 20 VJESD-30 Code: R-XUFM-X18JESD-609 Code: e3Number of Elements: 4Number of Terminals: 18Operating Temperature-Max: 125 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 3000 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Finish: MATTE TINTerminal Form: UNSPECIFIEDTerminal Position: UPPERTransistor Element Material: SILICONTurn-off Time-Nom (toff): 660 nsTurn-on Time-Nom (ton): 225 nsVCEsat-Max: 3.7 V Insulated Gate Bipolar Transistor, 570A I(C), 1200V V(BR)CES, N-Channel, MODULE-18