#EUPEC, #FD400R33KF2, #IGBT_Module, #IGBT, FD400R33KF2 Insulated Gate Bipolar Transistor, 660A I(C), 3300V V(BR)CES,; FD400R33KF2
Manufacturer Part Number: FD400R33KF2Part Life Cycle Code: ActiveIhs Manufacturer: Infineon TECHNOLOGIES AGManufacturer: Infineon Technologies AGRisk Rank: 5.61Collector Current-Max (IC): 660 ACollector-Emitter Voltage-Max: 3300 VGate-Emitter Voltage-Max: 20 VNumber of Elements: 1Operating Temperature-Max: 125 °CPower Dissipation-Max (Abs): 4800 WSubcategory: Insulated Gate BIP TransistorsVCEsat-Max: 4.25 V Insulated Gate Bipolar Transistor, 660A I(C), 3300V V(BR)CES,