#EUPEC, #FD600R17KF6C_B2, #IGBT_Module, #IGBT, FD600R17KF6C_B2 Insulated Gate Bipolar Transistor, 975A I(C), 1700V V(BR)CES, N-Channel, MODULE-10; FD600R17KF6C_B2
Manufacturer Part Number: FD600R17KF6C_B2Pbfree Code: NoPart Life Cycle Code: ObsoleteIhs Manufacturer: Infineon TECHNOLOGIES AGPart Package Code: MODULEPackage Description: MODULE-10Pin Count: 10ECCN Code: EAR99Manufacturer: Infineon Technologies AGRisk Rank: 5.62Case Connection: ISOLATEDCollector Current-Max (IC): 975 ACollector-Emitter Voltage-Max: 1700 VConfiguration: SINGLE WITH BUILT-IN DIODEGate-Emitter Voltage-Max: 20 VJESD-30 Code: R-XUFM-X10Number of Elements: 1Number of Terminals: 10Operating Temperature-Max: 125 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 4800 WSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTime Insulated Gate Bipolar Transistor, 975A I(C), 1700V V(BR)CES, N-Channel, MODULE-10