Content last revised on May 22, 2023
Manufacturer Part Number: FDC8602Brand Name: ON SemiconductorPbfree Code: ActiveIhs Manufacturer: ON SEMICONDUCTORPackage Description: SMALL OUTLINE, R-PDSO-G6Manufacturer Package Code: 419BLECCN Code: EAR99HTS Code: 8541.29.00.95Manufacturer: ON SemiconductorRisk Rank: 0.9Additional Feature: ULTRA-LOW RESISTANCEConfiguration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 100 VDrain Current-Max (Abs) (ID): 1.2 ADrain Current-Max (ID): 1.2 ADrain-source On Resistance-Max: 0.35 ΩFET Technology: METAL-OXIDE SEMICONDUCTORFeedback Cap-Max (Crss): 5 pFJEDEC-95 Code: MO-193AAJESD-30 Code: R-PDSO-G6Moisture Sensitivity Level: 1Number of Elements: 2Number of Terminals: 6Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 0.96 WSubcategory: FET General Purpose PowerSurface Mount: YESTerminal Form: GULL WINGTerminal Position: DUALTime Dual N-Channel Shielded Gate PowerTrench® MOSFET, 100 V, 1.2 A, 350 mΩ, 3000-REEL