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Fairchild Semiconductor FDC86244

  • FDC86244
  • FDC86244 N-Channel Shielded Gate Power Trench® MOSFET, 150 V, 2.3 A, 144 mΩ, 3000-REEL; FDC86244

    · Categories: IGBT
    · Manufacturer: Fairchild Semiconductor
    · Price:
    Price Range: US$ 50 - US$ 200 (Estimated)
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    · Date Code: Please Verify on Quote
    . Available Qty: 300054049
    MOQ: 1 PC
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    Content last revised on May 18, 2023

    Manufacturer Part Number: FDC86244Brand Name: ON SemiconductorPbfree Code: ActiveIhs Manufacturer: ON SEMICONDUCTORPackage Description: SMALL OUTLINE, R-PDSO-G6Manufacturer Package Code: 419BLECCN Code: EAR99HTS Code: 8541.29.00.95Manufacturer: ON SemiconductorRisk Rank: 0.95Additional Feature: ULTRA-LOW RESISTANCEConfiguration: SINGLE WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 150 VDrain Current-Max (Abs) (ID): 2.3 ADrain Current-Max (ID): 2.3 ADrain-source On Resistance-Max: 0.144 ΩFET Technology: METAL-OXIDE SEMICONDUCTORFeedback Cap-Max (Crss): 5 pFJEDEC-95 Code: MO-193AAJESD-30 Code: R-PDSO-G6Moisture Sensitivity Level: 1Number of Elements: 1Number of Terminals: 6Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 1.6 WQualification Status: Not QualifiedSubcategory: FET General Purpose PowerSurface Mount: YESTerminal Form: GULL WINGTerminal Position: DUALTime N-Channel Shielded Gate Power Trench® MOSFET, 150 V, 2.3 A, 144 mΩ, 3000-REEL