Content last revised on May 24, 2023
Manufacturer Part Number: FDD86326Brand Name: ON SemiconductorPbfree Code: ActiveIhs Manufacturer: ON SEMICONDUCTORPackage Description: SMALL OUTLINE, R-PSSO-G2Manufacturer Package Code: 369ASECCN Code: EAR99HTS Code: 8541.29.00.95Manufacturer: ON SemiconductorRisk Rank: 0.92Avalanche Energy Rating (Eas): 121 mJCase Connection: DRAINConfiguration: SINGLE WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 80 VDrain Current-Max (Abs) (ID): 42 ADrain Current-Max (ID): 8 ADrain-source On Resistance-Max: 0.023 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJEDEC-95 Code: TO-252JESD-30 Code: R-PSSO-G2Moisture Sensitivity Level: 1Number of Elements: 1Number of Terminals: 2Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 62 WPulsed Drain Current-Max (IDM): 40 AQualification Status: Not QualifiedSubcategory: FET General Purpose PowerSurface Mount: YESTerminal Form: GULL WINGTerminal Position: SINGLETime N-Channel Shielded Gate PowerTrench® MOSFET 80 V, 37 A, 23 mΩ, 2500-REEL