Fairchild Semiconductor FDG6317NZ New IGBT Module

Manufacturer Part Number: FDG6317NZ
Brand Name: ON Semiconductor
Pbfree Code: Active
Ihs Manufacturer: ON SEMICONDUCTOR
Package Description: SMALL OUTLINE, R-PDSO-G6
Manufacturer Package Code: 419AD
ECCN Code: EAR99
HTS Code: 8541.21.00.95
Manufacturer: ON Semiconductor
Risk Rank: 0.95
Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min: 20 V
Drain Current-Max (Abs) (ID): 0.7 A
Drain Current-Max (ID): 0.7 A
Drain-source On Resistance-Max: 0.4 Ω
FET Technology: METAL-OXIDE SEMICONDUCTOR
JESD-30 Code: R-PDSO-G6
Moisture Sensitivity Level: 1
Number of Elements: 2
Number of Terminals: 6
Operating Mode: ENHANCEMENT MODE
Operating Temperature-Max: 150 °C
Package Body Material: PLASTIC/EPOXY
Package Shape: RECTANGULAR
Package Style: SMALL OUTLINE
Peak Reflow Temperature (Cel): NOT SPECIFIED
Polarity/Channel Type: N-CHANNEL
Power Dissipation-Max (Abs): 0.3 W
Qualification Status: Not Qualified
Subcategory: FET General Purpose Power
Surface Mount: YES
Terminal Form: GULL WING
Terminal Position: DUAL
Time
Dual 20V N-Channel PowerTrench® MOSFET, 0.7 A, 400 mΩ, 3000-REEL