Content last revised on July 4, 2023
Manufacturer Part Number: FDMB3900ANBrand Name: ON SemiconductorPbfree Code: ActiveIhs Manufacturer: ON SEMICONDUCTORPackage Description: SMALL OUTLINE, R-PDSO-N6Manufacturer Package Code: 511CWECCN Code: EAR99HTS Code: 8541.29.00.95Manufacturer: ON SemiconductorRisk Rank: 0.94Additional Feature: ULTRA-LOW RESISTANCECase Connection: DRAINConfiguration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 25 VDrain Current-Max (Abs) (ID): 7 ADrain Current-Max (ID): 7 ADrain-source On Resistance-Max: 0.023 ΩFET Technology: METAL-OXIDE SEMICONDUCTORFeedback Cap-Max (Crss): 215 pFJESD-30 Code: R-PDSO-N6Moisture Sensitivity Level: 1Number of Elements: 2Number of Terminals: 6Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 1.6 WSubcategory: FET General Purpose PowerSurface Mount: YESTerminal Form: NO LEADTerminal Position: DUALTime Dual N-Channel Power Trench® MOSFET 25V, 7.0A, 23mΩ, 3000-REEL