Content last revised on December 7, 2023
Manufacturer Part Number: FDMS3660ASBrand Name: ON SemiconductorPbfree Code: ActiveIhs Manufacturer: ON SEMICONDUCTORPackage Description: SMALL OUTLINE, R-PDSO-F6Manufacturer Package Code: 483AJECCN Code: EAR99HTS Code: 8541.29.00.95Manufacturer: ON SemiconductorRisk Rank: 0.96Case Connection: DRAIN SOURCEConfiguration: SERIES, 2 ELEMENTS WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 30 VDrain Current-Max (Abs) (ID): 130 ADrain Current-Max (ID): 13 ADrain-source On Resistance-Max: 0.008 ΩFET Technology: METAL-OXIDE SEMICONDUCTORFeedback Cap-Max (Crss): 70 pFJEDEC-95 Code: MO-240AAJESD-30 Code: R-PDSO-F6Moisture Sensitivity Level: 1Number of Elements: 2Number of Terminals: 6Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 2.5 WSubcategory: FET General Purpose PowerSurface Mount: YESTerminal Form: FLATTerminal Position: DUALTime Asymmetric Dual N-Channel PowerTrench® Power Stage MOSFET 30V, 3000-REEL