Fairchild Semiconductor FDP083N15A_F102 IGBT Module

Manufacturer Part Number: FDP083N15A_F102Brand Name: ON SemiconductorRohs Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: ON SEMICONDUCTORPackage Description: FLANGE MOUNT, R-PSFM-T3Manufacturer Package Code: TO220T03ECCN Code: EAR99HTS Code: 8541.29.00.95Manufacturer: ON SemiconductorRisk Rank: 1.66Additional Feature: ULTRA LOW RESISTANCEAvalanche Energy Rating (Eas): 542 mJConfiguration: SINGLE WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 150 VDrain Current-Max (Abs) (ID): 105 ADrain Current-Max (ID): 105 ADrain-source On Resistance-Max: 0.0083 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJEDEC-95 Code: TO-220ABJESD-30 Code: R-PSFM-T3Number of Elements: 1Number of Terminals: 3Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 175 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 231 WPulsed Drain Current-Max (IDM): 420 AQualification Status: Not QualifiedSubcategory: FET General Purpose PowerSurface Mount: NOTerminal Form: THROUGH-HOLETerminal Position: SINGLETime N-Channel PowerTrench® MOSFET 150V, 117A, 8.3mΩ, TO-220 3L, 6400-RAIL