Fairchild Semiconductor FDS86106 IGBT Module

Manufacturer Part Number: FDS86106Brand Name: ON SemiconductorPbfree Code: ActiveIhs Manufacturer: ON SEMICONDUCTORPackage Description: SMALL OUTLINE, R-PDSO-G8Manufacturer Package Code: 751EBECCN Code: EAR99HTS Code: 8541.29.00.95Manufacturer: ON SemiconductorRisk Rank: 0.94Configuration: SINGLE WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 100 VDrain Current-Max (Abs) (ID): 3.4 ADrain Current-Max (ID): 3.4 ADrain-source On Resistance-Max: 0.105 ΩFET Technology: METAL-OXIDE SEMICONDUCTORFeedback Cap-Max (Crss): 3 pFJESD-30 Code: R-PDSO-G8Moisture Sensitivity Level: 1Number of Elements: 1Number of Terminals: 8Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 5 WQualification Status: Not QualifiedSubcategory: FET General Purpose PowerSurface Mount: YESTerminal Form: GULL WINGTerminal Position: DUALTime N-Channel Power Trench® MOSFET 100V, 3.4A, 105mΩ, 2500-REEL