Content last revised on May 25, 2023
Manufacturer Part Number: FDU7N60NZTUBrand Name: ON SemiconductorPbfree Code: ActiveIhs Manufacturer: ON SEMICONDUCTORPackage Description: IN-LINE, R-PSIP-T3Manufacturer Package Code: 369ARECCN Code: EAR99HTS Code: 8541.29.00.95Manufacturer: ON SemiconductorRisk Rank: 0.92Avalanche Energy Rating (Eas): 347 mJConfiguration: SINGLE WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 600 VDrain Current-Max (Abs) (ID): 5.5 ADrain Current-Max (ID): 5.5 ADrain-source On Resistance-Max: 1.25 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJEDEC-95 Code: TO-251AAJESD-30 Code: R-PSIP-T3Number of Elements: 1Number of Terminals: 3Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: IN-LINEPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 90 WPulsed Drain Current-Max (IDM): 22 ASubcategory: FET General Purpose PowerSurface Mount: NOTerminal Form: THROUGH-HOLETerminal Position: SINGLETime Power MOSFET, N-Channel, UniFETTM II, 600 V, 5.5 A, 1.25 Ω, IPAK, 5040-TUBE