Content last revised on July 12, 2023
Manufacturer Part Number: FDZ1323NZBrand Name: ON SemiconductorPbfree Code: ActiveIhs Manufacturer: ON SEMICONDUCTORPackage Description: GRID ARRAY, R-PBGA-B6Manufacturer Package Code: 567REECCN Code: EAR99HTS Code: 8541.29.00.95Manufacturer: ON SemiconductorRisk Rank: 0.92Configuration: COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODEFET Technology: METAL-OXIDE SEMICONDUCTORFeedback Cap-Max (Crss): 380 pFJESD-30 Code: R-PBGA-B6Moisture Sensitivity Level: 1Number of Elements: 2Number of Terminals: 6Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: GRID ARRAYPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 2 WSubcategory: FET General Purpose PowerSurface Mount: YESTerminal Form: BALLTerminal Position: BOTTOMTime Common Drain N-Channel 2.5 V PowerTrench® WL-CSP MOSFET 20V, 10A, 13mΩ, 5000-REEL