#EUPEC, #FF200R12KE3G, #IGBT_Module, #IGBT, FF200R12KE3G 200A/1200V/IGBT/2U; FF200R12KE3G
Product Category: IGBT Modules FF200R12KE3 Manufacturer: Infineon Configuration: Dual Collector- Emitter Voltage VCEO Max: 1200 V Collector-Emitter Saturation Voltage: 1.7 V Continuous Collector Current at 25 C: 200 A Gate-Emitter Leakage Current: 400 nA Pd - Power Dissipation: 1.05 kW Package / Case: IS5a ( 62 mm )-7 Maximum Operating Temperature: + 125 C Brand: Infineon Technologies Height: 30.9 mm Length: 106.4 mm Maximum Gate Emitter Voltage: +/- 20 V Minimum Operating Temperature: - 40 C Mounting Style: Screw Factory Pack Quantity: 10 200A/1200V/IGBT/2U