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MITSUBISHI FM30TF-10S

  • FM30TF-10S

FM30TF-10S Power Field-Effect Transistor, 30A I(D), 500V, 0.2ohm, 6-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET; FM30TF-10S

· Categories: IGBT
· Manufacturer: MITSUBISHI
· Price:
Price Range: US$ 50 - US$ 200 (Estimated)
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· Date Code: Please Verify on Quote
. Available Qty: 36
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Content last revised on June 18, 2023

Manufacturer Part Number: FM30TF-10SPart Life Cycle Code: ObsoleteIhs Manufacturer: Mitsubishi ELECTRIC CORPPackage Description: FLANGE MOUNT, R-PUFM-X17Manufacturer: Mitsubishi ElectricRisk Rank: 5.84Configuration: COMPLEXDS Breakdown Voltage-Min: 500 VDrain Current-Max (ID): 30 ADrain-source On Resistance-Max: 0.2 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJESD-30 Code: R-PUFM-X17Number of Elements: 6Number of Terminals: 17Operating Mode: DEPLETION MODEPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPolarity/Channel Type: N-CHANNELPulsed Drain Current-Max (IDM): 90 AQualification Status: Not QualifiedSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTransistor Application: SWITCHINGTransistor Element Material: SILICON Power Field-Effect Transistor, 30A I(D), 500V, 0.2ohm, 6-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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