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Mitsubishi FM50DY-10 New IGBT Module

#Mitsubishi, #FM50DY_10, #IGBT_Module, #IGBT, FM50DY-10 Power Field-Effect Transistor, 50A I(D), 500V, 0.2ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconducto
  • Category: IGBT Module
  • Manufacturer:Mitsubishi
  • Package Type: IGBT module
  • Date Code: 2022+
  • Available Qty: 161

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FM50DY-10 Description

Sell FM50DY-10, #Mitsubishi #FM50DY-10 New Stock, FM50DY-10 Power Field-Effect Transistor, 50A I(D), 500V, 0.2ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, #IGBT_Module, #IGBT, #FM50DY_10
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Manufacturer Part Number: FM50DY-10
Manufacturer: Mitsubishi ELECTRIC CORP
Package Description: FLANGE MOUNT, R-PUFM-X7
Configuration: SERIES, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR
DS Breakdown Voltage-Min: 500 V
Drain Current-Max (ID): 50 A
Drain-source On Resistance-Max: 0.2 Ω
FET Technology: METAL-OXIDE SEMICONDUCTOR
JESD-30 Code: R-PUFM-X7
Number of Elements: 2
Number of Terminals: 7
Operating Mode: DEPLETION MODE
Package Body Material: PLASTIC/EPOXY
Package Shape: RECTANGULAR
Package Style: FLANGE MOUNT
Polarity/Channel Type: N-CHANNEL
Pulsed Drain Current-Max (IDM): 150 A
Surface Mount: NO
Terminal Form: UNSPECIFIED
Terminal Position: UPPER
Transistor Application: SWITCHING
Transistor Element Material: SILICON

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