Name: Mitsubishi FM50DY-10 IGBT_Module
Brand: Mitsubishi
SKU: FM50DY-10
Price: 78 USD
Availability: InStock

#Mitsubishi, #FM50DY_10, #IGBT_Module, #IGBT, FM50DY-10 Power Field-Effect Transistor, 50A I(D), 500V, 0.2ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconducto

· Categories: IGBT Module

· Manufacturer: Mitsubishi

· Price: US$ 78

· Date Code: 2022+

. Available Qty: 329

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Tags: 500v igbt mitsubishi n-channel

+Shipping: US$ 35

= Total: US$ 113

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FM50DY-10 Specification

Sell FM50DY-10, #Mitsubishi #FM50DY-10 Stock, FM50DY-10 Power Field-Effect Transistor, 50A I(D), 500V, 0.2ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, #IGBT_Module, #IGBT, #FM50DY_10

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Manufacturer Part Number: FM50DY-10

Manufacturer: Mitsubishi ELECTRIC CORP

Package Description: FLANGE MOUNT, R-PUFM-X7

Configuration: SERIES, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR

DS Breakdown Voltage-Min: 500 V

Drain Current-Max (ID): 50 A

Drain-source On Resistance-Max: 0.2 Ω

FET Technology: METAL-OXIDE SEMICONDUCTOR

JESD-30 Code: R-PUFM-X7

Number of Elements: 2

Number of Terminals: 7

Operating Mode: DEPLETION MODE

Package Body Material: PLASTIC/EPOXY

Package Shape: RECTANGULAR

Package Style: FLANGE MOUNT

Polarity/Channel Type: N-CHANNEL

Pulsed Drain Current-Max (IDM): 150 A

Surface Mount: NO

Terminal Form: UNSPECIFIED

Terminal Position: UPPER

Transistor Application: SWITCHING

Transistor Element Material: SILICON

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Mitsubishi FM50DY-10 IGBT Module

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FM50DY-10 Specification

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