Shunlongwei Co Ltd.

Shunlongwei Co. ltd.

IGBT Module / LCD Display Distributor

Customer Service
+86-755-8273 2562

Mitsubishi FM50DY-10 IGBT Module

FM50DY-10 Power Field-Effect Transistor, 50A I(D), 500V, 0.2ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

· Categories: IGBT Module
· Manufacturer: Mitsubishi
· Price: US$ 78
· Date Code: 2022+
. Available Qty: 329
Like
Tweet
Pin It
4k
Email: sales@shunlongwei.com
Whatsapp: 0086 189 2465 1869

Contact us To Buy Now !

Sending...Please Wait.

FM50DY-10 Specification

Manufacturer Part Number: FM50DY-10
Manufacturer: Mitsubishi ELECTRIC CORP
Package Description: FLANGE MOUNT, R-PUFM-X7
Configuration: SERIES, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR
DS Breakdown Voltage-Min: 500 V
Drain Current-Max (ID): 50 A
Drain-source On Resistance-Max: 0.2 Ω
FET Technology: METAL-OXIDE SEMICONDUCTOR
JESD-30 Code: R-PUFM-X7
Number of Elements: 2
Number of Terminals: 7
Operating Mode: DEPLETION MODE
Package Body Material: PLASTIC/EPOXY
Package Shape: RECTANGULAR
Package Style: FLANGE MOUNT
Polarity/Channel Type: N-CHANNEL
Pulsed Drain Current-Max (IDM): 150 A
Surface Mount: NO
Terminal Form: UNSPECIFIED
Terminal Position: UPPER
Transistor Application: SWITCHING
Transistor Element Material: SILICON

Latest Update
Infineon
Infineon