#FAIRCHILD, #FMBL1G200US60, #IGBT_Module, #IGBT, FMBL1G200US60 Insulated Gate Bipolar Transistor, 200A I(C), 600V V(BR)CES, N-Channel, 7PM-BB, 7 PIN; FMBL1G200US60
Manufacturer Part Number: FMBL1G200US60Part Life Cycle Code: ObsoleteIhs Manufacturer: Fairchild SEMICONDUCTOR CORPPackage Description: FLANGE MOUNT, R-PUFM-X7Pin Count: 7Manufacturer: Fairchild Semiconductor CorporationRisk Rank: 5.82Case Connection: ISOLATEDCollector Current-Max (IC): 200 ACollector-Emitter Voltage-Max: 600 VConfiguration: SINGLE WITH BUILT-IN DIODEGate-Emitter Voltage-Max: 20 VJESD-30 Code: R-PUFM-X7Number of Elements: 1Number of Terminals: 7Operating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 830 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTransistor Application: MOTOR CONTROLTransistor Element Material: SILICONTurn-off Time-Nom (toff): 500 nsTurn-on Time-Nom (ton): 320 nsVCEsat-Max: 2.8 V Insulated Gate Bipolar Transistor, 200A I(C), 600V V(BR)CES, N-Channel, 7PM-BB, 7 PIN