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FAIRCHILD FME6G10US60

  • FME6G10US60

FME6G10US60 Insulated Gate Bipolar Transistor, 10A I(C), 600V V(BR)CES, N-Channel, 17PM-BA, 17 PIN; FME6G10US60

· Categories: IGBT
· Manufacturer: FAIRCHILD
· Price:
Price Range: US$ 50 - US$ 200 (Estimated)
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· Date Code: Please Verify on Quote
. Available Qty: 45
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Content last revised on May 18, 2023

Manufacturer Part Number: FME6G10US60Part Life Cycle Code: ObsoleteIhs Manufacturer: Fairchild SEMICONDUCTOR CORPPackage Description: FLANGE MOUNT, R-XUFM-P17Pin Count: 17Manufacturer: Fairchild Semiconductor CorporationRisk Rank: 5.82Additional Feature: LOW CONDUCTION LOSSCase Connection: ISOLATEDCollector Current-Max (IC): 10 ACollector-Emitter Voltage-Max: 600 VConfiguration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODEGate-Emitter Voltage-Max: 20 VJESD-30 Code: R-XUFM-P17Number of Elements: 6Number of Terminals: 17Operating Temperature-Max: 150 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 37 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Form: PIN/PEGTerminal Position: UPPERTransistor Application: MOTOR CONTROLTransistor Element Material: SILICONTurn-off Time-Nom (toff): 284 nsTurn-on Time-Nom (ton): 49 nsVCEsat-Max: 2.8 V Insulated Gate Bipolar Transistor, 10A I(C), 600V V(BR)CES, N-Channel, 17PM-BA, 17 PIN