#FAIRCHILD, #FME6G30US60, #IGBT_Module, #IGBT, FME6G30US60 Insulated Gate Bipolar Transistor, 30A I(C), 600V V(BR)CES, N-Channel, 17PM-CA, 17 PIN; FME6G30US60
Manufacturer Part Number: FME6G30US60Part Life Cycle Code: ObsoleteIhs Manufacturer: Fairchild SEMICONDUCTOR CORPPackage Description: FLANGE MOUNT, R-XUFM-X17Pin Count: 17Manufacturer: Fairchild Semiconductor CorporationRisk Rank: 5.82Additional Feature: LOW CONDUCTION LOSSCase Connection: ISOLATEDCollector Current-Max (IC): 30 ACollector-Emitter Voltage-Max: 600 VConfiguration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODEGate-Emitter Voltage-Max: 20 VJESD-30 Code: R-XUFM-X17Number of Elements: 6Number of Terminals: 17Operating Temperature-Max: 150 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 83 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTransistor Application: MOTOR CONTROLTransistor Element Material: SILICONTurn-off Time-Nom (toff): 341 nsTurn-on Time-Nom (ton): 101 nsVCEsat-Max: 2.8 V Insulated Gate Bipolar Transistor, 30A I(C), 600V V(BR)CES, N-Channel, 17PM-CA, 17 PIN