#EUPEC, #FP15R12W1T4_B3, #IGBT_Module, #IGBT, FP15R12W1T4-B3 Insulated Gate Bipolar Transistor, 28A I(C), 1200V V(BR)CES, N-Channel, MODULE-21; FP15R12W1T4-B3
Manufacturer Part Number: FP15R12W1T4_B3Pbfree Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: Infineon TECHNOLOGIES AGPart Package Code: MODULEPackage Description: FLANGE MOUNT, R-XUFM-X21Pin Count: 21ECCN Code: EAR99Manufacturer: Infineon Technologies AGRisk Rank: 2.05Case Connection: ISOLATEDCollector Current-Max (IC): 28 ACollector-Emitter Voltage-Max: 1200 VConfiguration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTORGate-Emitter Voltage-Max: 20 VJESD-30 Code: R-XUFM-X21Number of Elements: 6Number of Terminals: 21Operating Temperature-Max: 175 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 130 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTime Insulated Gate Bipolar Transistor, 28A I(C), 1200V V(BR)CES, N-Channel, MODULE-21