Content last revised on May 1, 2023
Manufacturer Part Number: FQN1N60CTABrand Name: ON SemiconductorPbfree Code: ActiveIhs Manufacturer: ON SEMICONDUCTORPackage Description: CYLINDRICAL, O-PBCY-T3Manufacturer Package Code: 135ARECCN Code: EAR99HTS Code: 8541.29.00.95Manufacturer: ON SemiconductorRisk Rank: 0.92Configuration: SINGLE WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 600 VDrain Current-Max (Abs) (ID): 0.3 ADrain Current-Max (ID): 0.3 ADrain-source On Resistance-Max: 11.5 ΩFET Technology: METAL-OXIDE SEMICONDUCTORFeedback Cap-Max (Crss): 6 pFJEDEC-95 Code: TO-92JESD-30 Code: O-PBCY-T3Number of Elements: 1Number of Terminals: 3Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: ROUNDPackage Style: CYLINDRICALPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 3 WQualification Status: Not QualifiedSubcategory: FET General Purpose PowerSurface Mount: NOTerminal Form: THROUGH-HOLETerminal Position: BOTTOMTime Power MOSFET, N-Channel, QFET®, 600 V, 0.3 A, 11.5 Ω, TO-92, 2000-FNFLD