#Infineon Technologies, #FS200R07A1E3, #IGBT_Module, #IGBT, FS200R07A1E3 Insulated Gate Bipolar Transistor, 250A I(C), 650V V(BR)CES, N-Channel, MODULE-25; FS200R07A1E3
Manufacturer Part Number: FS200R07A1E3Pbfree Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: Infineon TECHNOLOGIES AGPart Package Code: MODULEPackage Description: FLANGE MOUNT, R-XUFM-X13Pin Count: 25ECCN Code: EAR99Manufacturer: Infineon Technologies AGRisk Rank: 5.07Case Connection: ISOLATEDCollector Current-Max (IC): 250 ACollector-Emitter Voltage-Max: 650 VConfiguration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTORGate-Emitter Voltage-Max: 20 VJESD-30 Code: R-XUFM-X13Moisture Sensitivity Level: 1Number of Elements: 6Number of Terminals: 13Operating Temperature-Max: 175 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 790 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTime Insulated Gate Bipolar Transistor, 250A I(C), 650V V(BR)CES, N-Channel, MODULE-25