#EUPEC, #FZ1800R12KL4C, #IGBT_Module, #IGBT, FZ1800R12KL4C Insulated Gate Bipolar Transistor, 2850A I(C), 1200V V(BR)CES, N-Channel, MODULE-9
Manufacturer Part Number: FZ1800R12KL4C
Ihs Manufacturer: Infineon TECHNOLOGIES AG
Part Package Code: MODULE
Package Description: MODULE-9
Pin Count: 9
ECCN Code: EAR99
Manufacturer: Infineon Technologies AG
Risk Rank: 5.52
Case Connection: ISOLATED
Collector Current-Max (IC): 2850 A
Collector-Emitter Voltage-Max: 1200 V
Configuration: COMPLEX
Gate-Emitter Voltage-Max: 20 V
JESD-30 Code: R-XUFM-X9
Number of Elements: 3
Number of Terminals: 9
Operating Temperature-Max: 150 °C
Package Body Material: UNSPECIFIED
Package Shape: RECTANGULAR
Package Style: FLANGE MOUNT
Peak Reflow Temperature (Cel): NOT SPECIFIED
Polarity/Channel Type: N-CHANNEL
Power Dissipation-Max (Abs): 11400 W
Qualification Status: Not Qualified
Subcategory: Insulated Gate BIP Transistors
Surface Mount: NO
Terminal Form: UNSPECIFIED
Terminal Position: UPPER
Time
Insulated Gate Bipolar Transistor, 2850A I(C), 1200V V(BR)CES, N-Channel, MODULE-9