#Diodes Inc, #FZT956TC, #IGBT_Module, #IGBT, FZT956TC Power Bipolar Transistor, 2A I(C), 200V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin; FZT956TC
Manufacturer Part Number: FZT956TCPart Life Cycle Code: ObsoleteIhs Manufacturer: DIODES INCPackage Description: SMALL OUTLINE, R-PDSO-G4ECCN Code: EAR99HTS Code: 8541.29.00.75Manufacturer: Diodes IncorporatedRisk Rank: 5.25Case Connection: COLLECTORCollector Current-Max (IC): 2 ACollector-Emitter Voltage-Max: 200 VConfiguration: SINGLEDC Current Gain-Min (hFE): 50JESD-30 Code: R-PDSO-G4JESD-609 Code: e3Moisture Sensitivity Level: 1Number of Elements: 1Number of Terminals: 4Package Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): 260Polarity/Channel Type: PNPQualification Status: Not QualifiedSurface Mount: YESTerminal Finish: MATTE TINTerminal Form: GULL WINGTerminal Position: DUALTime Power Bipolar Transistor, 2A I(C), 200V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin